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| PartNumber | FDU6N50TU | FDU6N25 |
| Description | MOSFET 500V N-Channel MOSFET | MOSFET N-Channel UniFET |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-251-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 500 V | 250 V |
| Id Continuous Drain Current | 6 A | 4.4 A |
| Rds On Drain Source Resistance | 900 mOhms | 1.1 Ohms |
| Vgs Gate Source Voltage | 30 V | 30 V |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 89 W | 50 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | - |
| Packaging | Tube | Tube |
| Height | 16.3 mm | 6.3 mm |
| Length | 10.67 mm | 6.8 mm |
| Series | FDU6N50 | FDU6N25 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 4.7 mm | 2.5 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Fall Time | 35 ns | 34 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 55 ns | 60 ns |
| Factory Pack Quantity | 5040 | 5040 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 25 ns | 24 ns |
| Typical Turn On Delay Time | 6 ns | 30 ns |
| Unit Weight | 0.012102 oz | 0.019013 oz |
| Vgs th Gate Source Threshold Voltage | - | 5 V |
| Qg Gate Charge | - | 6 nC |
| Forward Transconductance Min | - | 5.5 S |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDU6N50TU | MOSFET 500V N-Channel MOSFET | |
| FDU6N25 | MOSFET N-Channel UniFET | ||
ON Semiconductor |
FDU6N50TU | RF Bipolar Transistors MOSFET 500V N-Channel MOSFET | |
| FDU6N25 | MOSFET N-CH 250V 4.4A IPAK-3 | ||
| FDU6N25TU | Nuevo y original | ||
| FDU6N50 | Nuevo y original | ||
| FDU6N50FTU | Nuevo y original |