 |  | | |
| PartNumber | FDP12N60NZ | FDP12N60N | FDP12N60NZ,FDP12N60,12N6 |
| Description | MOSFET 600V N-Chan MOSFET UniFET-II | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 12 A | - | - |
| Rds On Drain Source Resistance | 530 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 5 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 26 nC | - | - |
| Pd Power Dissipation | 240 W | - | - |
| Configuration | Single | - | - |
| Tradename | UniFET | - | - |
| Packaging | Tube | - | - |
| Height | 16.3 mm | - | - |
| Length | 10.67 mm | - | - |
| Series | FDP12N60NZ | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.7 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 13.5 S | - | - |
| Fall Time | 60 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 50 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.063493 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDP12N60NZ | MOSFET 600V N-Chan MOSFET UniFET-II | |
ON Semiconductor |
FDP12N60NZ | Darlington Transistors MOSFET 600V N-Chan MOSFET UniFET-II | |
| FDP12N60N | Nuevo y original | ||
| FDP12N60NZ,FDP12N60,12N6 | Nuevo y original |