 |  |  | |
| PartNumber | FDD86380-F085 | FDD86381-F085 | FDD86380_F085 |
| Description | MOSFET MV780/20V1000AMOSFET N-channelPowerTrench | MOSFET 80/20V 1000A N-chnl PowerTrench MOSFET | MV7 80/20V 1000A N-CHANNEL POW |
| Manufacturer | ON Semiconductor | ON Semiconductor | Fairchild Semiconductor |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 80 V | 80 V | - |
| Id Continuous Drain Current | 50 A | 25 A | - |
| Rds On Drain Source Resistance | 30 mOhms | 45 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 20 nC | 14 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 75 W | 48.4 W | - |
| Configuration | Single | Single | 1 N-Channel |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Reel | Reel | Reel |
| Height | 2.39 mm | 4.83 mm | - |
| Length | 6.73 mm | 10.67 mm | - |
| Series | FDD86380_F085 | FDD86381_F085 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 9.65 mm | - |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
| Fall Time | 6 ns | 5 ns | 6 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 13 ns | 9 ns | 13 ns |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 15 ns | 14 ns | 15 ns |
| Typical Turn On Delay Time | 12 ns | 8 ns | 12 ns |
| Part # Aliases | FDD86380_F085 | FDD86381_F085 | - |
| Unit Weight | 0.009184 oz | 0.009184 oz | - |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 75 W |
| Vgs Gate Source Voltage | - | - | +/- 20 V |
| Id Continuous Drain Current | - | - | 50 A |
| Vds Drain Source Breakdown Voltage | - | - | 80 V |
| Vgs th Gate Source Threshold Voltage | - | - | 2 V |
| Rds On Drain Source Resistance | - | - | 30 mOhms |
| Qg Gate Charge | - | - | 20 nC |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDD86380-F085 | MOSFET MV780/20V1000AMOSFET N-channelPowerTrench | |
| FDD86381-F085 | MOSFET 80/20V 1000A N-chnl PowerTrench MOSFET | ||
| FDD86380_F085 | MV7 80/20V 1000A N-CHANNEL POW | ||
ON Semiconductor |
FDD86380-F085 | MOSFET N-CH 80V 50A DPAK | |
| FDD86381-F085 | MOSFET N-CH 80V 25A DPAK |