PartNumber | FDD7N10L | FDD7N20 | FDD7N20TF |
Description | POWER FIELD-EFFECT TRANSISTOR, 5A I(D), 200V, 0.69OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA |
Fabricante | Parte # | Descripción | RFQ |
---|---|---|---|
ON Semiconductor / Fairchild |
FDD7N20TM | MOSFET 200V N-CH MOSFET | |
FDD7N60NZTM | MOSFET N-Channel 600V 5.5A | ||
FDD7N25LZTM | MOSFET 250V N-Channel MOSFET, UniFET | ||
FDD7N10L | Nuevo y original | ||
FDD7N20 | POWER FIELD-EFFECT TRANSISTOR, 5A I(D), 200V, 0.69OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA | ||
FDD7N20TF | Nuevo y original | ||
FDD7N25LZ | Nuevo y original | ||
FDD7N25LZTM,FDD7N25LZ | Nuevo y original | ||
FDD7N60NZ | Nuevo y original | ||
ON Semiconductor |
FDD7N20TM | MOSFET N-CH 200V 5A D-PAK | |
FDD7N25LZTM | MOSFET N-CH 250V 6.2A DPAK-3 | ||
FDD7N60NZTM | MOSFET N-CH 600V 5.5A DPAK-3 |