PartNumber | FDD5N50TM-WS | FDD5N50TM_WS | FDD5N50TM |
Description | MOSFET UniFET 500V 4A | IGBT Transistors MOSFET UniFET 500V 4A | Power Field-Effect Transistor, 4A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
Manufacturer | ON Semiconductor | Fairchild Semiconductor | - |
Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-252-3 | - | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 500 V | - | - |
Id Continuous Drain Current | 4 A | - | - |
Rds On Drain Source Resistance | 1.4 Ohms | - | - |
Vgs Gate Source Voltage | 30 V | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 40 W | - | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Reel | - |
Height | 2.39 mm | - | - |
Length | 6.73 mm | - | - |
Series | FDD5N50 | - | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 6.22 mm | - | - |
Brand | ON Semiconductor / Fairchild | - | - |
Fall Time | 20 ns | 20 ns | - |
Product Type | MOSFET | - | - |
Rise Time | 22 ns | 22 ns | - |
Factory Pack Quantity | 2500 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 28 ns | 28 ns | - |
Typical Turn On Delay Time | 13 ns | 13 ns | - |
Part # Aliases | FDD5N50TM_WS | - | - |
Unit Weight | 0.009184 oz | 0.009184 oz | - |
Package Case | - | TO-252-3 | - |
Pd Power Dissipation | - | 40 W | - |
Vgs Gate Source Voltage | - | 30 V | - |
Id Continuous Drain Current | - | 4 A | - |
Vds Drain Source Breakdown Voltage | - | 500 V | - |
Rds On Drain Source Resistance | - | 1.4 Ohms | - |