 | |  | |
| PartNumber | FDD10AN06A0 | FDD10AN06A0-F085 | FDD10AN06A |
| Description | MOSFET 60V 50a .15 Ohms/VGS=1V | MOSFET 60V, 50A, 10.5mOhm Power Trench MOSFET | |
| Manufacturer | ON Semiconductor | ON Semiconductor | Fairchild Semiconductor |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | E | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Id Continuous Drain Current | 50 A | 50 A | - |
| Rds On Drain Source Resistance | 9.4 mOhms | 9.4 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 135 W | 135 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | PowerTrench | - | - |
| Packaging | Reel | Reel | Digi-ReelR Alternate Packaging |
| Height | 2.39 mm | 2.39 mm | - |
| Length | 6.73 mm | 6.73 mm | - |
| Series | FDD10AN06A0 | FDD10AN06_F085 | PowerTrenchR |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
| Fall Time | 32 ns | 32 ns | 32 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 79 ns | 79 ns | 79 ns |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 32 ns | 32 ns | 32 ns |
| Typical Turn On Delay Time | 8 ns | 8 ns | 8 ns |
| Part # Aliases | FDD10AN06A0_NL | FDD10AN06A0_F085 | - |
| Unit Weight | 0.009184 oz | 0.009184 oz | 0.009184 oz |
| Vgs th Gate Source Threshold Voltage | - | 4 V | - |
| Qg Gate Charge | - | 28 nC | - |
| Qualification | - | AEC-Q101 | - |
| Part Aliases | - | - | FDD10AN06A0_NL |
| Package Case | - | - | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Operating Temperature | - | - | -55°C ~ 175°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | TO-252AA |
| FET Type | - | - | MOSFET N-Channel, Metal Oxide |
| Power Max | - | - | 135W |
| Drain to Source Voltage Vdss | - | - | 60V |
| Input Capacitance Ciss Vds | - | - | 1840pF @ 25V |
| FET Feature | - | - | Standard |
| Current Continuous Drain Id 25°C | - | - | 11A (Ta), 50A (Tc) |
| Rds On Max Id Vgs | - | - | 10.5 mOhm @ 50A, 10V |
| Vgs th Max Id | - | - | 4V @ 250μA |
| Gate Charge Qg Vgs | - | - | 37nC @ 10V |
| Pd Power Dissipation | - | - | 135 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 50 A |
| Vds Drain Source Breakdown Voltage | - | - | 60 V |
| Rds On Drain Source Resistance | - | - | 9.4 mOhms |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDD10AN06A0 | MOSFET 60V 50a .15 Ohms/VGS=1V | |
| FDD10AN06A0-F085 | MOSFET 60V, 50A, 10.5mOhm Power Trench MOSFET | ||
| FDD10AN06A | Nuevo y original | ||
| FDD10AN06A0-NL | Nuevo y original | ||
| FDD10AN06A0_F085 | N-CHANNEL POWERTRENCH MOSFET | ||
| FDD10AN06AD | Nuevo y original | ||
| FDD10AN06AO | Nuevo y original | ||
ON Semiconductor |
FDD10AN06A0 | MOSFET N-CH 60V 50A D-PAK | |
| FDD10AN06A0-F085 | MOSFET N-CH 60V 11A D-PAK |