 |  | | |
| PartNumber | FDC658AP | FDC658 | FDC658 , 1N5224B |
| Description | MOSFET -30VSgl P-Chl LogLv PwrTrch MOSFET | ||
| Manufacturer | ON Semiconductor | FAIRCHI | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SSOT-6 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 4 A | - | - |
| Rds On Drain Source Resistance | 44 mOhms | - | - |
| Vgs Gate Source Voltage | 25 V | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 1.6 W | - | - |
| Configuration | Single | Single Quad Drain | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | PowerTrench | - | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Height | 1.1 mm | - | - |
| Length | 2.9 mm | - | - |
| Product | MOSFET Small Signal | - | - |
| Series | FDC658AP | PowerTrenchR | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Width | 1.6 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 8.4 S | - | - |
| Fall Time | 12 ns | 12 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 12 ns | 12 ns | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 16 ns | 16 ns | - |
| Typical Turn On Delay Time | 7 ns | 7 ns | - |
| Unit Weight | 0.001058 oz | 0.001270 oz | - |
| Package Case | - | SOT-23-6 Thin, TSOT-23-6 | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | SuperSOT-6 | - |
| FET Type | - | MOSFET P-Channel, Metal Oxide | - |
| Power Max | - | 800mW | - |
| Drain to Source Voltage Vdss | - | 30V | - |
| Input Capacitance Ciss Vds | - | 470pF @ 15V | - |
| FET Feature | - | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | - | 4A (Ta) | - |
| Rds On Max Id Vgs | - | 50 mOhm @ 4A, 10V | - |
| Vgs th Max Id | - | 3V @ 250μA | - |
| Gate Charge Qg Vgs | - | 8.1nC @ 5V | - |
| Pd Power Dissipation | - | 1.6 W | - |
| Vgs Gate Source Voltage | - | 25 V | - |
| Id Continuous Drain Current | - | 4 A | - |
| Vds Drain Source Breakdown Voltage | - | - 30 V | - |
| Rds On Drain Source Resistance | - | 44 mOhms | - |
| Forward Transconductance Min | - | 8.4 S | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDC658AP | MOSFET -30VSgl P-Chl LogLv PwrTrch MOSFET | |
| FDC658P | MOSFET SSOT-6 P-CH -30V | ||
| FDC658 | Nuevo y original | ||
| FDC658 , 1N5224B | Nuevo y original | ||
| FDC658AP-NL | Nuevo y original | ||
| FDC658P NL | Nuevo y original | ||
| FDC658AP-CUT TAPE | Nuevo y original | ||
| FDC658P-CUT TAPE | Nuevo y original | ||
| FDC658P_NB4E011 | IC AUDIO JACK DETECTION SUPERSOT | ||
ON Semiconductor |
FDC658AP | MOSFET P-CH 30V 4A SSOT6 | |
| FDC658P | MOSFET P-CH 30V 4A SSOT-6 |