 |  | |
| PartNumber | FDB86360-F085 | FDB86360-F085-CUT TAPE |
| Description | MOSFET N-Channel Power Trench MOSFET | |
| Manufacturer | ON Semiconductor | - |
| Product Category | MOSFET | - |
| RoHS | Y | - |
| Technology | Si | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | TO-263-3 | - |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 80 V | - |
| Id Continuous Drain Current | 110 A | - |
| Rds On Drain Source Resistance | 1.5 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - |
| Vgs Gate Source Voltage | 20 V | - |
| Qg Gate Charge | 207 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 175 C | - |
| Pd Power Dissipation | 333 W | - |
| Configuration | Single | - |
| Qualification | AEC-Q101 | - |
| Tradename | PowerTrench | - |
| Packaging | Reel | - |
| Height | 4.83 mm | - |
| Length | 10.67 mm | - |
| Series | FDB86360_F085 | - |
| Transistor Type | 1 N-Channel | - |
| Width | 9.65 mm | - |
| Brand | ON Semiconductor / Fairchild | - |
| Fall Time | 70 ns | - |
| Product Type | MOSFET | - |
| Rise Time | 197 ns | - |
| Factory Pack Quantity | 800 | - |
| Subcategory | MOSFETs | - |
| Typical Turn Off Delay Time | 86 ns | - |
| Typical Turn On Delay Time | 75 ns | - |
| Part # Aliases | FDB86360_F085 | - |
| Unit Weight | 0.046296 oz | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDB86360-F085 | MOSFET N-Channel Power Trench MOSFET | |
| FDB86360-F085-CUT TAPE | Nuevo y original | ||
ON Semiconductor |
FDB86360-F085 | MOSFET N-CH 80V 110A TO263 |