FDB7030L

FDB7030L vs FDB7030LFSC vs FDB7030LNL

 
PartNumberFDB7030LFDB7030LFSCFDB7030LNL
DescriptionMOSFET N-Ch PowerTrench Logic LevelPower Field-Effect Transistor, 80A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current80 A--
Rds On Drain Source Resistance7 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation68 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height4.83 mm--
Length10.67 mm--
Transistor Type1 N-Channel--
Width9.65 mm--
BrandON Semiconductor / Fairchild--
Fall Time15 ns--
Product TypeMOSFET--
Rise Time13 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time42 ns--
Typical Turn On Delay Time13 ns--
Unit Weight0.139332 oz--
Fabricante Parte # Descripción RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDB7030L MOSFET N-Ch PowerTrench Logic Level
ON Semiconductor
ON Semiconductor
FDB7030L MOSFET N-CH 30V 80A D2PAK
FDB7030L_L86Z MOSFET N-CH 30V 80A TO-263AB
FDB7030LFSC Nuevo y original
FDB7030LNL Power Field-Effect Transistor, 80A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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