 | | | |
| PartNumber | FDB6644 | FDB6644S | FDB6670 |
| Description | 50 A, 30 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | 55 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | |
| Manufacturer | FAIRCHILD | - | FAIRCHILD |
| Product Category | IC Chips | - | FETs - Single |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDB6690S | MOSFET 30V N-Ch PowerTrench SyncFET | |
| FDB6644 | 50 A, 30 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | ||
| FDB6644S | 55 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | ||
| FDB6670 | Nuevo y original | ||
| FDB6670A | Nuevo y original | ||
| FDB6670AC | Nuevo y original | ||
| FDB6670AL-NL | Nuevo y original | ||
| FDB6670AL. | Nuevo y original | ||
| FDB6670ALFSC | Nuevo y original | ||
| FDB6670ALM | Nuevo y original | ||
| FDB6670AS-NL | Nuevo y original | ||
| FDB6670ASNL | Nuevo y original | ||
| FDB6670BL | Nuevo y original | ||
| FDB6670S | Power Field-Effect Transistor, 62A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| FDB6670S-NL | Nuevo y original | ||
| FDB6676 | Power Field-Effect Transistor, 75A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| FDB6676B | Nuevo y original | ||
| FDB6676S | MOSFET 30V N-Ch PowerTrench Logic Level | ||
| FDB6676S FDB6676 | Nuevo y original | ||
| FDB6676_M | Nuevo y original | ||
| FDB6690S-NL | Nuevo y original | ||
| FDB66N15 | Nuevo y original | ||
| FDB66N15TM | MOSFET 150V N-Ch MOSFET | ||
| FDB66N15TM-NL | Nuevo y original | ||
ON Semiconductor |
FDB6670AL | MOSFET N-CH 30V 80A D2PAK | |
| FDB6670AS | MOSFET N-CH 30V 62A TO-263AB | ||
| FDB6690S | MOSFET N-CH 30V 42A TO-263AB |