FDB33

FDB33N25TM vs FDB33N10 vs FDB33N25

 
PartNumberFDB33N25TMFDB33N10FDB33N25
DescriptionMOSFET 250V N-Ch MOSFETTransistor: N-MOSFET, unipolar, 250V, 33A, 235W, D2PAK
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage250 V--
Id Continuous Drain Current33 A--
Rds On Drain Source Resistance94 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation235 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height4.83 mm--
Length10.67 mm--
SeriesFDB33N25--
Transistor Type1 N-Channel--
Width9.65 mm--
BrandON Semiconductor / Fairchild--
Fall Time120 ns--
Product TypeMOSFET--
Rise Time230 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time75 ns--
Typical Turn On Delay Time35 ns--
Unit Weight0.046296 oz--
Fabricante Parte # Descripción RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDB33N25TM MOSFET 250V N-Ch MOSFET
FDB33N10 Nuevo y original
FDB33N25 Transistor: N-MOSFET, unipolar, 250V, 33A, 235W, D2PAK
FDB33N25TM-NL Nuevo y original
ON Semiconductor
ON Semiconductor
FDB33N25TM MOSFET N-CH 250V 33A D2PAK
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