 |  |  | |
| PartNumber | FDB2614 | FDB2614DKR | FDB2670 |
| Description | MOSFET 200V N-Channel PowerTrench MOSFET | MOSFET N-CH 200V 19A TO-263AB | |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 200 V | - | - |
| Id Continuous Drain Current | 62 A | - | - |
| Rds On Drain Source Resistance | 22.9 mOhms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 260 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | PowerTrench | - | - |
| Packaging | Reel | - | - |
| Height | 4.83 mm | - | - |
| Length | 10.67 mm | - | - |
| Series | FDB2614 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 9.65 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 72 S | - | - |
| Fall Time | 162 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 284 ns | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 103 ns | - | - |
| Typical Turn On Delay Time | 77 ns | - | - |
| Unit Weight | 0.046296 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDB2614 | MOSFET 200V N-Channel PowerTrench MOSFET | |
ON Semiconductor |
FDB2614 | MOSFET N-CH 200V 62A D2PAK | |
| FDB2670 | MOSFET N-CH 200V 19A TO-263AB | ||
| FDB2614DKR | Nuevo y original | ||
| FDB2670-NL | Nuevo y original |