FDB047

FDB047N10 vs FDB047N10_12 vs FDB047N10-CUT TAPE

 
PartNumberFDB047N10FDB047N10_12FDB047N10-CUT TAPE
DescriptionMOSFET 100V N-Channel PowerTrench
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current164 A--
Rds On Drain Source Resistance4.7 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation375 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenamePowerTrench--
PackagingReel--
Height4.83 mm--
Length10.67 mm--
SeriesFDB047N10--
Transistor Type1 N-Channel--
Width9.65 mm--
BrandON Semiconductor / Fairchild--
Fall Time244 ns--
Product TypeMOSFET--
Rise Time386 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time344 ns--
Typical Turn On Delay Time174 ns--
Unit Weight0.062153 oz--
Fabricante Parte # Descripción RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDB047N10 MOSFET 100V N-Channel PowerTrench
ON Semiconductor
ON Semiconductor
FDB047N10 MOSFET N-CH 100V 120A D2PAK
FDB047N10_12 Nuevo y original
FDB047N10-CUT TAPE Nuevo y original
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