PartNumber | FCI25N60N-F102 | FCI25N60N_F102 | FCI25N60N |
Description | MOSFET 600V N-CHAN SupreMOS | IGBT Transistors MOSFET 600V N-CHAN SupreMOS | MOSFET N-CH 600V 25A I2PAK |
Manufacturer | ON Semiconductor | Fairchild Semiconductor | FAIRCHILD |
Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | FETs - Single |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-262-3 | - | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 600 V | - | - |
Id Continuous Drain Current | 25 A | - | - |
Rds On Drain Source Resistance | 107 mOhms | - | - |
Pd Power Dissipation | 216 W | - | - |
Configuration | Single | - | - |
Packaging | Tube | Tube | - |
Height | 7.88 mm | - | - |
Length | 10.29 mm | - | - |
Series | FCI25N60N | - | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 4.83 mm | - | - |
Brand | ON Semiconductor / Fairchild | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 1000 | - | - |
Subcategory | MOSFETs | - | - |
Part # Aliases | FCI25N60N_F102 | - | - |
Unit Weight | 0.073511 oz | 0.073511 oz | - |
Package Case | - | I2PAK-3 | - |
Pd Power Dissipation | - | 216 W | - |
Id Continuous Drain Current | - | 25 A | - |
Vds Drain Source Breakdown Voltage | - | 600 V | - |
Rds On Drain Source Resistance | - | 107 mOhms | - |