 |  | | |
| PartNumber | EMG2DXV5T1G | EMG2DXV5T1 | EMG2DXV5T5 |
| Description | Bipolar Transistors - Pre-Biased 50V Dual BRT NPN | TRANS 2NPN PREBIAS 0.23W SOT553 | TRANS 2NPN PREBIAS 0.23W SOT553 |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - Pre-Biased | - | - |
| RoHS | Y | - | - |
| Configuration | Dual Common Emitter | - | - |
| Transistor Polarity | NPN | - | - |
| Typical Input Resistor | 47 kOhms | - | - |
| Typical Resistor Ratio | 1 | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-553-5 | - | - |
| DC Collector/Base Gain hfe Min | 80 | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Continuous Collector Current | 0.1 A | - | - |
| Peak DC Collector Current | 100 mA | - | - |
| Pd Power Dissipation | 230 mW | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Packaging | Reel | - | - |
| DC Current Gain hFE Max | 80 | - | - |
| Height | 0.6 mm | - | - |
| Length | 1.7 mm | - | - |
| Width | 1.3 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000617 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
| EMG2DXV5T5G | Bipolar Transistors - Pre-Biased 50V Dual BRT NPN | ||
ON Semiconductor |
EMG2DXV5T1G | Bipolar Transistors - Pre-Biased 50V Dual BRT NPN | |
| EMG2DXV5T1 | TRANS 2NPN PREBIAS 0.23W SOT553 | ||
| EMG2DXV5T1G | TRANS 2NPN PREBIAS 0.23W SOT553 | ||
| EMG2DXV5T5 | TRANS 2NPN PREBIAS 0.23W SOT553 | ||
| EMG2DXV5T5G | Bipolar Transistors - Pre-Biased 50V Dual BRT NPN |