DXT3

DXT3150-13 vs DXT3150 vs DXT3832.768

 
PartNumberDXT3150-13DXT3150DXT3832.768
DescriptionBipolar Transistors - BJT 1000mW 25Vceo
ManufacturerDiodes IncorporatedD-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-89-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max25 V--
Collector Base Voltage VCBO50 V--
Emitter Base Voltage VEBO7 V--
Collector Emitter Saturation Voltage500 mV--
Maximum DC Collector Current5 A--
Gain Bandwidth Product fT220 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesDXT3150--
Height1.5 mm--
Length4.5 mm--
PackagingReel--
Width2.48 mm--
BrandDiodes Incorporated--
DC Collector/Base Gain hfe Min50 at 5 A, 2 V--
Pd Power Dissipation1000 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2500--
SubcategoryTransistors--
Unit Weight0.001834 oz--
Fabricante Parte # Descripción RFQ
Diodes Incorporated
Diodes Incorporated
DXT3904-13 Bipolar Transistors - BJT 1000mW 40Vceo
DXT3150-13 Bipolar Transistors - BJT 1000mW 25Vceo
DXT3906-13 Bipolar Transistors - BJT 1000mW -40Vceo
DXT3150 Nuevo y original
DXT3832.768 Nuevo y original
DXT3904 Nuevo y original
DXT3904-13-F Nuevo y original
DXT3906 Nuevo y original
DXT3906-13-F Nuevo y original
DXT3150-13 Bipolar Transistors - BJT 1000mW 25Vceo
DXT3904-13 Bipolar Transistors - BJT 1000mW 40Vceo
DXT3906-13 Bipolar Transistors - BJT 1000mW -40Vceo
Top