DTC123JET1

DTC123JET1G vs DTC123JET1 vs DTC123JET1G , XC6382C701

 
PartNumberDTC123JET1GDTC123JET1DTC123JET1G , XC6382C701
DescriptionBipolar Transistors - Pre-Biased 100mA 50V BRT NPNBipolar Transistors - Pre-Biased 100mA 50V BRT NPN
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - Pre-BiasedBipolar Transistors - Pre-Biased-
RoHSYN-
ConfigurationSingleSingle-
Transistor PolarityNPNNPN-
Typical Input Resistor2.2 kOhms2.2 kOhms-
Typical Resistor Ratio0.0470.047-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSC-75-3SC-75-3-
DC Collector/Base Gain hfe Min8080-
Collector Emitter Voltage VCEO Max50 V50 V-
Continuous Collector Current0.1 A0.1 A-
Peak DC Collector Current100 mA100 mA-
Pd Power Dissipation200 mW200 mW-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesDTC123JE--
PackagingReelReel-
DC Current Gain hFE Max8080-
Height0.75 mm0.75 mm-
Length1.6 mm1.6 mm-
Width0.8 mm0.8 mm-
BrandON SemiconductorON Semiconductor-
Product TypeBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors - Pre-Biased-
Factory Pack Quantity30003000-
SubcategoryTransistorsTransistors-
Unit Weight0.000089 oz--
Fabricante Parte # Descripción RFQ
DTC123JET1G Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN
DTC123JET1G-CUT TAPE Nuevo y original
DTC123JET1G , XC6382C701 Nuevo y original
ON Semiconductor
ON Semiconductor
DTC123JET1 Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN
DTC123JET1G Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN
DTC123JET1 TRANS PREBIAS NPN 200MW SC75
Top