DST84

DST847BDJ-7 vs DST847BDJ vs DST847BPDP6

 
PartNumberDST847BDJ-7DST847BDJDST847BPDP6
DescriptionBipolar Transistors - BJT BIPOLAR TRANS NPN
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Arrays-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-963-6--
Transistor PolarityNPNNPN-
ConfigurationDualDual-
Collector Emitter Voltage VCEO Max45 V--
Collector Base Voltage VCBO50 V--
Emitter Base Voltage VEBO6 V--
Collector Emitter Saturation Voltage300 mV300 mV-
Maximum DC Collector Current100 mA100 mA-
Gain Bandwidth Product fT170 MHz170 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesDST847DST847-
DC Current Gain hFE Max470470-
PackagingReelDigi-ReelR Alternate Packaging-
BrandDiodes Incorporated--
Continuous Collector Current100 mA100 mA-
DC Collector/Base Gain hfe Min200--
Pd Power Dissipation300 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity10000--
SubcategoryTransistors--
Package Case-SOT-963-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-963-
Power Max-300mW-
Transistor Type-2 NPN (Dual)-
Current Collector Ic Max-100mA-
Voltage Collector Emitter Breakdown Max-45V-
DC Current Gain hFE Min Ic Vce-200 @ 2mA, 5V-
Vce Saturation Max Ib Ic-300mV @ 5mA, 100mA-
Current Collector Cutoff Max-15nA (ICBO)-
Frequency Transition-170MHz-
Pd Power Dissipation-300 mW-
Collector Emitter Voltage VCEO Max-45 V-
Collector Base Voltage VCBO-50 V-
Emitter Base Voltage VEBO-6 V-
DC Collector Base Gain hfe Min-200 at 2 mA 5 V-
Fabricante Parte # Descripción RFQ
Diodes Incorporated
Diodes Incorporated
DST847BDJ-7 Bipolar Transistors - BJT BIPOLAR TRANS NPN
DST847BPDP6-7 Bipolar Transistors - BJT BIPOLAR TRANS COMP
DST847BPDP6-7 TRANS NPN/PNP 45V 0.1A SOT963
DST847BDJ-7 TRANS 2NPN 45V 0.1A SOT963
DST847BDJ Nuevo y original
DST847BPDP6 Nuevo y original
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