DPLS35

DPLS350E-13 vs DPLS350E vs DPLS350E-13-76

 
PartNumberDPLS350E-13DPLS350EDPLS350E-13-76
DescriptionBipolar Transistors - BJT 1000mW -50Vceo
ManufacturerDiodes Incorporated--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-223-4--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 50 V--
Collector Base Voltage VCBO- 60 V--
Emitter Base Voltage VEBO- 6 V--
Collector Emitter Saturation Voltage- 300 mV--
Maximum DC Collector Current- 5 A--
Gain Bandwidth Product fT100 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesDPLS350--
Height1.65 mm--
Length6.7 mm--
PackagingReel--
Width3.7 mm--
BrandDiodes Incorporated--
Pd Power Dissipation1000 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2500--
SubcategoryTransistors--
Unit Weight0.003951 oz--
Fabricante Parte # Descripción RFQ
Diodes Incorporated
Diodes Incorporated
DPLS350Y-13 Bipolar Transistors - BJT 1000mW -50Vceo
DPLS350E-13 Bipolar Transistors - BJT 1000mW -50Vceo
DPLS350E Nuevo y original
DPLS350E-13-76 Nuevo y original
DPLS350Y Nuevo y original
DPLS350Y-13-GIGA Nuevo y original
DPLS350Y-13-GIGA PB-FRE Nuevo y original
DPLS350Y-7-F Nuevo y original
DPLS350Y-13 Bipolar Transistors - BJT 1000mW -50Vceo
DPLS350E-13 Bipolar Transistors - BJT 1000mW -50Vceo
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