 |  | | |
| PartNumber | DN3525N8-G | DN3525-8N | DN3525N8 |
| Description | MOSFET 250V 6Ohm | MOSFET 250V 6Ohm | |
| Manufacturer | Microchip | - | Microchip Technology |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | SOT-89-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 250 V | - | - |
| Id Continuous Drain Current | 360 mA | - | - |
| Rds On Drain Source Resistance | 6 Ohms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 1.6 W | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Depletion | - | Depletion |
| Packaging | Reel | - | Digi-ReelR Alternate Packaging |
| Height | 1.6 mm | - | - |
| Length | 4.6 mm | - | - |
| Product | MOSFET Small Signal | - | - |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Type | FET | - | - |
| Width | 2.6 mm | - | - |
| Brand | Microchip Technology | - | - |
| Fall Time | 40 ns | - | 25 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 25 ns | - | 25 ns |
| Factory Pack Quantity | 2000 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.004233 oz | - | 0.001862 oz |
| Series | - | - | - |
| Package Case | - | - | TO-243AA |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | TO-243AA (SOT-89) |
| FET Type | - | - | MOSFET N-Channel, Metal Oxide |
| Power Max | - | - | 1.6W |
| Drain to Source Voltage Vdss | - | - | 250V |
| Input Capacitance Ciss Vds | - | - | 350pF @ 25V |
| FET Feature | - | - | Depletion Mode |
| Current Continuous Drain Id 25°C | - | - | 360mA (Tj) |
| Rds On Max Id Vgs | - | - | 6 Ohm @ 200mA, 0V |
| Vgs th Max Id | - | - | - |
| Gate Charge Qg Vgs | - | - | - |
| Pd Power Dissipation | - | - | 1.6 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 360 mA |
| Vds Drain Source Breakdown Voltage | - | - | 250 V |
| Rds On Drain Source Resistance | - | - | 6 Ohms |
| Typical Turn Off Delay Time | - | - | 25 ns |
| Typical Turn On Delay Time | - | - | 20 ns |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Microchip Technology |
DN3525N8-G | MOSFET 250V 6Ohm | |
| DN3525-8N | Nuevo y original | ||
| DN3525N8 | MOSFET 250V 6Ohm | ||
| DN3525N8-G-CUT TAPE | Nuevo y original | ||
| DN3525N8-G | IGBT Transistors MOSFET 250V 6Ohm |