 | |  | |
| PartNumber | DMTH43M8LK3Q-13 | DMTH43M8LK3-13 | DMTH43M8LK3Q |
| Description | MOSFET MOSFETBVDSS: 31V-40V | MOSFET MOSFETBVDSS: 31V-40V | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | - |
| Id Continuous Drain Current | 100 A | 100 A | - |
| Rds On Drain Source Resistance | 2.9 mOhms | 2.9 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | 1 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 38.5 nC | 38.5 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 88 W | 88 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | Reel | - |
| Series | DMTH43M8 | DMTH43M8 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Fall Time | 11 ns | 11 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 5.7 ns | 5.7 ns | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 23.5 ns | 23.5 ns | - |
| Typical Turn On Delay Time | 5.2 ns | 5.2 ns | - |
| Unit Weight | 0.011640 oz | 0.011640 oz | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMTH43M8LK3Q-13 | MOSFET MOSFETBVDSS: 31V-40V | |
| DMTH43M8LK3-13 | MOSFET MOSFETBVDSS: 31V-40V | ||
| DMTH43M8LK3Q | Nuevo y original |