| PartNumber | DMTH43M8LFG-7 | DMTH43M8LFGQ-7 | DMTH43M8LFGQ-13 |
| Description | MOSFET MOSFET BVDSS: 31V-40V | MOSFET MOSFET BVDSS 31V40V | MOSFET MOSFET BVDSS 31V-40V |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerDI3333-8 | PowerDI3333-8 | PowerDI3333-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | 40 V |
| Id Continuous Drain Current | 100 A | 100 A | 100 A |
| Rds On Drain Source Resistance | 6 mOhms | 3 mOhms | 3 mOhms |
| Vgs th Gate Source Threshold Voltage | 1 V | 1 V | 1 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 40.1 nC | 40.1 nC | 40.1 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 65.2 W | 65.2 W | 65.2 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Fall Time | 12.4 ns | 12.4 ns | 12.4 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 10.7 ns | 10.7 ns | 10.7 ns |
| Factory Pack Quantity | 2000 | 2000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 24.6 ns | 24.6 ns | 24.6 ns |
| Typical Turn On Delay Time | 5.16 ns | 5.16 ns | 5.16 ns |
| Qualification | - | AEC-Q101 | AEC-Q101 |