DMTH10H025

DMTH10H025LK3-13 vs DMTH10H025SK3-13 vs DMTH10H025LK3Q-13

 
PartNumberDMTH10H025LK3-13DMTH10H025SK3-13DMTH10H025LK3Q-13
DescriptionMOSFET MOSFET BVDSS: 61V-100VMOSFET MOSFET BVDSS: 61V~100V TO252 T&R 2.5KMOSFET MOSFET BVDSS: 61V-100V
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3TO-252-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage100 V100 V100 V
Id Continuous Drain Current51.7 A46.3 A51.7 A
Rds On Drain Source Resistance22 mOhms23 mOhms22 mOhms
Vgs th Gate Source Threshold Voltage1 V2 V1 V
Vgs Gate Source Voltage20 V20 V20 V
Qg Gate Charge21 nC21.4 nC21 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
Pd Power Dissipation100 W3.7 W100 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelReel
SeriesDMTH10H025DMTH10H025DMTH10H025
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Fall Time8.2 ns13.7 ns8.2 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time9.4 ns11.2 ns9.4 ns
Factory Pack Quantity250025002500
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time16.7 ns27.5 ns16.7 ns
Typical Turn On Delay Time6.3 ns8.2 ns6.3 ns
Unit Weight0.011640 oz-0.011640 oz
Qualification--AEC-Q101
Fabricante Parte # Descripción RFQ
Diodes Incorporated
Diodes Incorporated
DMTH10H025LK3-13 MOSFET MOSFET BVDSS: 61V-100V
DMTH10H025SK3-13 MOSFET MOSFET BVDSS: 61V~100V TO252 T&R 2.5K
DMTH10H025LK3Q-13 MOSFET MOSFET BVDSS: 61V-100V
DMTH10H025LK3-13 MOSFET BVDSS: 61V100V TO252 T&R 2.5K
DMTH10H025SK3-13 MOSFET BVDSS: 61V-100V TO252 T&R
DMTH10H025LK3Q Nuevo y original
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