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| PartNumber | DMT6016LSS-13 | DMT6016LSS | DMT6016LSS///////////// |
| Description | MOSFET 60V N-Ch Enh FET 16mOhm 10Vgs 8.9A | ||
| Manufacturer | Diodes Incorporated | DIODES | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 9.2 A | - | - |
| Rds On Drain Source Resistance | 18 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 17 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 2.1 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Series | DMT60 | DMT60 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Diodes Incorporated | - | - |
| Fall Time | 7 ns | 7 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 5.2 ns | 5.2 ns | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 13 ns | 13 ns | - |
| Typical Turn On Delay Time | 3.4 ns | 3.4 ns | - |
| Unit Weight | 0.002610 oz | 0.002610 oz | - |
| Package Case | - | SO-8 | - |
| Pd Power Dissipation | - | 2.7 W | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 10.6 A | - |
| Vds Drain Source Breakdown Voltage | - | 60 V | - |
| Vgs th Gate Source Threshold Voltage | - | 2.5 V | - |
| Rds On Drain Source Resistance | - | 16 mOhms | - |
| Qg Gate Charge | - | 17 nC | - |