PartNumber | DMT3003LFG-7 | DMT3003LFG-13 | DMT3003LFGQ-13 |
Description | MOSFET MOSFET BVDSS: 31V-40V | MOSFET MOSFET BVDSS: 31V-40V | MOSFET MOSFET BVDSS 25V-30V |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | MOSFET | MOSFET | MOSFET |
Technology | Si | Si | Si |
Package / Case | PowerDI3333-8 | PowerDI3333-8 | PowerDI3333-8 |
Packaging | Reel | Reel | Reel |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 2000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Mounting Style | - | - | SMD/SMT |
Number of Channels | - | - | 1 Channel |
Transistor Polarity | - | - | N-Channel |
Vds Drain Source Breakdown Voltage | - | - | 30 V |
Id Continuous Drain Current | - | - | 100 A |
Rds On Drain Source Resistance | - | - | 3.2 mOhms |
Vgs th Gate Source Threshold Voltage | - | - | 1 V |
Vgs Gate Source Voltage | - | - | 20 V |
Qg Gate Charge | - | - | 44 nC |
Minimum Operating Temperature | - | - | - 55 C |
Maximum Operating Temperature | - | - | + 150 C |
Pd Power Dissipation | - | - | 62 W |
Configuration | - | - | Single |
Channel Mode | - | - | Enhancement |
Qualification | - | - | AEC-Q101 |
Transistor Type | - | - | 1 N-Channel |
Fall Time | - | - | 8 ns |
Rise Time | - | - | 4.3 ns |
Typical Turn Off Delay Time | - | - | 21 ns |
Typical Turn On Delay Time | - | - | 6.2 ns |