DMP6185SE

DMP6185SEQ-13 vs DMP6185SE-7 vs DMP6185SE-13

 
PartNumberDMP6185SEQ-13DMP6185SE-7DMP6185SE-13
DescriptionMOSFET MOSFET BVDSS: 41V-60VMOSFET MOSFET BVDSS: 41V-60VMOSFET PCH 60V 3A SOT223
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryMOSFETMOSFET-
TechnologySiSi-
Package / CaseSOT-223-3SOT-223-3-
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current3 A--
Rds On Drain Source Resistance110 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge14 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.2 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
Transistor Type1 P-Channel--
BrandDiodes IncorporatedDiodes Incorporated-
Fall Time39 ns--
Product TypeMOSFETMOSFET-
Rise Time23 ns--
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time33 ns--
Typical Turn On Delay Time5.2 ns--
Mounting Style-SMD/SMT-
Packaging-Reel-
Unit Weight-0.009171 oz-
Fabricante Parte # Descripción RFQ
Diodes Incorporated
Diodes Incorporated
DMP6185SEQ-13 MOSFET MOSFET BVDSS: 41V-60V
DMP6185SE-7 MOSFET MOSFET BVDSS: 41V-60V
DMP6185SE-13 MOSFET PCH 60V 3A SOT223
DMP6185SE-7 MOSFET BVDSS: 41V60V SOT223 T&R 1K
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