 |  |  | |
| PartNumber | DMP6110SFDF-13 | DMP6110SFDFQ-13 | DMP6110SFDF-7 |
| Description | MOSFET MOSFET BVDSS: 41V-60V | MOSFET MOSFET BVDSS: 31V-40V | MOSFET P-CH 60V 4.2A UDFN2020-6 |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | MOSFET | - |
| Technology | Si | Si | - |
| Package / Case | U-DFN2020-6 | U-DFN2020-6 | - |
| Packaging | Reel | Reel | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 10000 | 10000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.000247 oz | - | - |
| RoHS | - | Y | - |
| Mounting Style | - | SMD/SMT | - |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | P-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 60 V | - |
| Id Continuous Drain Current | - | 4.2 A | - |
| Rds On Drain Source Resistance | - | 130 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 1 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 17.2 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 1.97 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Qualification | - | AEC-Q101 | - |
| Transistor Type | - | 1 P-Channel | - |
| Fall Time | - | 42 ns | - |
| Rise Time | - | 23 ns | - |
| Typical Turn Off Delay Time | - | 34 ns | - |
| Typical Turn On Delay Time | - | 4.4 ns | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMP6110SFDF-13 | MOSFET MOSFET BVDSS: 41V-60V | |
| DMP6110SFDFQ-7 | MOSFET MOSFET BVDSS: 31V-40V | ||
| DMP6110SFDFQ-13 | MOSFET MOSFET BVDSS: 31V-40V | ||
| DMP6110SFDF-7 | MOSFET P-CH 60V 4.2A UDFN2020-6 | ||
| DMP6110SFDF-13 | P-Channel Enhancement Mode Mosfet |