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DMP2010UFG

DMP2010UFG-7 vs DMP2010UFG-13 vs DMP2010UFG

 
PartNumberDMP2010UFG-7DMP2010UFG-13DMP2010UFG
DescriptionMOSFET 20V P-Ch Enh FET 10Vgss -80A IdmMOSFET 20V P-Ch Enh FET 10Vgss -80A Idm
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerDI3333-8PowerDI3333-8-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityP-ChannelP-ChannelP-Channel
Vds Drain Source Breakdown Voltage20 V20 V-
Id Continuous Drain Current42 A42 A-
Rds On Drain Source Resistance12.5 mOhms12.5 mOhms-
Vgs th Gate Source Threshold Voltage400 mV400 mV-
Vgs Gate Source Voltage10 V10 V-
Qg Gate Charge103 nC103 nC-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation900 mW900 mW-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelReel
SeriesDMP2010DMP2010DMP2010
BrandDiodes IncorporatedDiodes Incorporated-
Fall Time110 ns110 ns110 ns
Product TypeMOSFETMOSFET-
Rise Time30 ns30 ns30 ns
Factory Pack Quantity20003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time235 ns235 ns235 ns
Typical Turn On Delay Time9.7 ns9.7 ns9.7 ns
Unit Weight0.002540 oz0.002540 oz0.002540 oz
Package Case--PowerDI-3333
Pd Power Dissipation--900 mW
Vgs Gate Source Voltage--10 V
Id Continuous Drain Current--- 42 A
Vds Drain Source Breakdown Voltage--- 20 V
Vgs th Gate Source Threshold Voltage--- 400 mV
Rds On Drain Source Resistance--12.5 mOhms
Qg Gate Charge--103 nC
Fabricante Parte # Descripción RFQ
Diodes Incorporated
Diodes Incorporated 		DMP2010UFG-7 MOSFET 20V P-Ch Enh FET 10Vgss -80A Idm
DMP2010UFG-13 MOSFET 20V P-Ch Enh FET 10Vgss -80A Idm
DMP2010UFG Nuevo y original
DMP2010UFG-7 20V P-CHANNEL ENHANCEMENT MODE MOSFET
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