 |  |  | |
| PartNumber | DMN6070SSD-13 | DMN6070SFCL-7 | DMN6070SFCL |
| Description | MOSFET N-Ch Enh Mode FET 60Vdss 20Vgss | MOSFET N-Ch 31V to 99V 60V 120mOhm 606pF | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOIC-8 | X1-DFN1616-6 | - |
| Number of Channels | 2 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Id Continuous Drain Current | 3.3 A | 2.5 A | - |
| Rds On Drain Source Resistance | 80 Ohms | 120 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | 3 V | - |
| Vgs Gate Source Voltage | 10 V | 20 V | - |
| Qg Gate Charge | 12.3 nC | 12.3 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 1.5 W | 1.8 W | - |
| Configuration | Dual | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Digi-ReelR Alternate Packaging |
| Series | DMN60 | DMN60 | DMN60 |
| Transistor Type | 2 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Fall Time | 11 ns | 11 ns | 11 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 4.1 ns | 4.1 ns | 4.1 ns |
| Factory Pack Quantity | 2500 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 35 ns | 35 ns | 35 ns |
| Typical Turn On Delay Time | 3.5 ns | 3.5 ns | 3.5 ns |
| Unit Weight | 0.002610 oz | - | - |
| Forward Transconductance Min | - | 2.6 S | - |
| Package Case | - | - | 6-PowerUFDFN |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | X1-DFN1616-6 |
| FET Type | - | - | MOSFET N-Channel, Metal Oxide |
| Power Max | - | - | 600mW |
| Drain to Source Voltage Vdss | - | - | 60V |
| Input Capacitance Ciss Vds | - | - | 606pF @ 20V |
| FET Feature | - | - | Standard |
| Current Continuous Drain Id 25°C | - | - | 3A (Ta) |
| Rds On Max Id Vgs | - | - | 85 mOhm @ 1.5A, 10V |
| Vgs th Max Id | - | - | 3V @ 250μA |
| Gate Charge Qg Vgs | - | - | 12.3nC @ 10V |
| Pd Power Dissipation | - | - | 1.8 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 2.5 A |
| Vds Drain Source Breakdown Voltage | - | - | 60 V |
| Vgs th Gate Source Threshold Voltage | - | - | 3 V |
| Rds On Drain Source Resistance | - | - | 120 mOhms |
| Qg Gate Charge | - | - | 12.3 nC |
| Forward Transconductance Min | - | - | 2.6 S |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMN6070SSD-13 | MOSFET N-Ch Enh Mode FET 60Vdss 20Vgss | |
| DMN6070SFCL-7 | MOSFET N-Ch 31V to 99V 60V 120mOhm 606pF | ||
| DMN6070SFCL | Nuevo y original | ||
| DMN6070SSD13 | Power Field-Effect Transistor, 3.3A I(D), 60V, 0.08ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| DMN6070SY-13 | MOSFET N-CH 60V 4.1A SOT89-3 | ||
| DMN6070SSD-13 | Darlington Transistors MOSFET N-Ch Enh Mode FET 60Vdss 20Vgss | ||
| DMN6070SFCL-7 | IGBT Transistors MOSFET N-Ch 31V to 99V 60V 120mOhm 606pF |