DMN44

DMN4468LSS-13 vs DMN4468LSS vs DMN4468LSS-13-F

 
PartNumberDMN4468LSS-13DMN4468LSSDMN4468LSS-13-F
DescriptionMOSFET N-CHAN ENHNCMNT MODE
ManufacturerDiodes Incorporated-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSO-8--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current10 A--
Rds On Drain Source Resistance20 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1.52 W--
ConfigurationSingleSingle Quad Drain Triple Source-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height1.5 mm--
Length4.95 mm--
ProductMOSFET Small Signal--
SeriesDMN44DMN44-
Transistor Type1 N-Channel1 N-Channel-
Width3.95 mm--
BrandDiodes Incorporated--
Fall Time14.53 ns14.53 ns-
Product TypeMOSFET--
Rise Time14.53 ns14.53 ns-
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time18.84 ns18.84 ns-
Typical Turn On Delay Time5.46 ns5.46 ns-
Unit Weight0.002610 oz0.002610 oz-
Package Case-SO-8-
Pd Power Dissipation-1.52 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-10 A-
Vds Drain Source Breakdown Voltage-30 V-
Rds On Drain Source Resistance-20 mOhms-
Fabricante Parte # Descripción RFQ
Diodes Incorporated
Diodes Incorporated
DMN4468LSS-13 MOSFET N-CHAN ENHNCMNT MODE
DMN4468LSS Nuevo y original
DMN4468LSS-13-F Nuevo y original
DMN4468LSS-13 Darlington Transistors MOSFET N-CHAN ENHNCMNT MODE
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