DMN3067

DMN3067LW-7 vs DMN3067LW-13 vs DMN3067LW-7-F

 
PartNumberDMN3067LW-7DMN3067LW-13DMN3067LW-7-F
DescriptionMOSFET 30V N-Ch Enh Mode 12Vgss 447pF 4.6nCMOSFET 30V N-Ch Enh Mode 12Vgss 447pF 4.6nC
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-323-3SOT-323-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current2.6 A2.6 A-
Rds On Drain Source Resistance67 mOhms70 mOhms-
Vgs th Gate Source Threshold Voltage1.5 V1.5 V-
Vgs Gate Source Voltage4.5 V12 V-
Qg Gate Charge4.6 nC4.6 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1.1 W1.1 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
SeriesDMN3067DMN3067-
Transistor Type1 N-Channel1 N-Channel-
BrandDiodes IncorporatedDiodes Incorporated-
Fall Time6.1 ns6.1 ns-
Product TypeMOSFETMOSFET-
Rise Time5.2 ns5.2 ns-
Factory Pack Quantity300010000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time15 ns15 ns-
Typical Turn On Delay Time3.8 ns3.8 ns-
Unit Weight0.000176 oz0.000176 oz-
Tradename-PowerDI-
Fabricante Parte # Descripción RFQ
Diodes Incorporated
Diodes Incorporated
DMN3067LW-7 MOSFET 30V N-Ch Enh Mode 12Vgss 447pF 4.6nC
DMN3067LW-13 MOSFET 30V N-Ch Enh Mode 12Vgss 447pF 4.6nC
DMN3067LW-7-F Nuevo y original
DMN3067LW-7 Darlington Transistors MOSFET 30V N-Ch Enh Mode 12Vgss 447pF 4.6nC
DMN3067LW-13 MOSFET 30V N-Ch Enh Mode 12Vgss 447pF 4.6nC
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