DMN3051L

DMN3051L-7 vs DMN3051LDM-7

 
PartNumberDMN3051L-7DMN3051LDM-7
DescriptionMOSFET 1.4W 30V 5.8AMOSFET 30V 4A N-CHANNEL
ManufacturerDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseSOT-23-3SOT-26-6
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V30 V
Id Continuous Drain Current4.5 A4 A
Rds On Drain Source Resistance38 mOhms64 mOhms
Vgs th Gate Source Threshold Voltage1.3 V-
Vgs Gate Source Voltage10 V20 V
Qg Gate Charge9 nC-
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation1.4 W900 mW
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
PackagingReelReel
Height1 mm1.1 mm
Length2.9 mm3 mm
ProductMOSFET Small SignalMOSFET Small Signal
SeriesDMN3051DMN3051
Transistor Type1 N-Channel1 N-Channel
Width1.3 mm1.6 mm
BrandDiodes IncorporatedDiodes Incorporated
Forward Transconductance Min5 S-
Fall Time2.8 ns-
Product TypeMOSFETMOSFET
Rise Time6.2 ns-
Factory Pack Quantity30003000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time13.9 ns-
Typical Turn On Delay Time3.4 ns-
Unit Weight0.000282 oz0.000529 oz
Fabricante Parte # Descripción RFQ
Diodes Incorporated
Diodes Incorporated
DMN3051L-7 MOSFET 1.4W 30V 5.8A
DMN3051LDM-7 MOSFET 30V 4A N-CHANNEL
DMN3051L-7 Darlington Transistors MOSFET 1.4W 30V 5.8A
DMN3051LDM-7 MOSFET 30V 4A N-CHANNEL
DMN3051L Nuevo y original
DMN3051L-7-F/3N5 Nuevo y original
DMN3051L-7-HN Nuevo y original
DMN3051LDM Nuevo y original
DMN3051LDM-7-F Nuevo y original
DMN3051L-7-F Nuevo y original
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