DMN3024L

DMN3024LSD-13 vs DMN3024LK3-13 vs DMN3024LK3

 
PartNumberDMN3024LSD-13DMN3024LK3-13DMN3024LK3
DescriptionMOSFET ENHANCE MODE MOSFET 30V DUAL N-CHANNELMOSFET ENHANCE MODE MOSFET 30V N-CHANNEL
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSO-8TO-252-3-
Number of Channels2 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current7.2 A14.4 A-
Rds On Drain Source Resistance24 mOhms, 24 mOhms24 mOhms-
Vgs th Gate Source Threshold Voltage1 V1 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge12.9 nC, 12.9 nC12.9 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1.3 W4.1 W-
ConfigurationDualSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
ProductMOSFET Small SignalMOSFET Small Signal-
SeriesDMN3024DMN3024-
Transistor Type2 N-Channel1 N-Channel-
BrandDiodes IncorporatedDiodes Incorporated-
Forward Transconductance Min16.5 S, 16.5 S16.5 S-
Fall Time8 ns, 8 ns8 ns-
Product TypeMOSFETMOSFET-
Rise Time3.3 ns, 3.3 ns3.3 ns-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time16 ns, 16 ns16 ns-
Typical Turn On Delay Time2.9 ns, 2.9 ns2.9 ns-
Unit Weight0.002610 oz0.139332 oz-
Fabricante Parte # Descripción RFQ
Diodes Incorporated
Diodes Incorporated
DMN3024LSD-13 MOSFET ENHANCE MODE MOSFET 30V DUAL N-CHANNEL
DMN3024LSS-13 MOSFET ENHANCE MODE MOSFET 30V N-CHANNEL
DMN3024LK3-13 MOSFET ENHANCE MODE MOSFET 30V N-CHANNEL
DMN3024LK3 Nuevo y original
DMN3024LSS Nuevo y original
DMN3024LSS-13 Trans MOSFET N-CH 30V 8.5A Automotive 8-Pin SO T/R
DMN3024LSS-13 , W8-DWA01 Nuevo y original
DMN3024LSD-13 Darlington Transistors MOSFET ENHANCE MODE MOSFET 30V DUAL N-CHANNEL
DMN3024LK3-13 Darlington Transistors MOSFET ENHANCE MODE MOSFET 30V N-CHANNEL
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