DMN3018SF

DMN3018SFG-7 vs DMN3018SFGQ-13 vs DMN3018SFG-13

 
PartNumberDMN3018SFG-7DMN3018SFGQ-13DMN3018SFG-13
DescriptionMOSFET 30V N-Ch Enh Mode 25Vgss 1.0W 697pFMOSFET MOSFET BVDSS: 25V-30VMOSFET 30V N-Ch Enh Mode 25Vgss 1.0W 697pF
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
RoHSY-Y
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerDI3333-8PowerDI3333-8PowerDI3333-8
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage30 V-30 V
Id Continuous Drain Current8.5 A-8.5 A
Rds On Drain Source Resistance21 mOhms-21 mOhms
Vgs th Gate Source Threshold Voltage1.7 V-1.7 V
Vgs Gate Source Voltage25 V-25 V
Qg Gate Charge13.2 nC-13.2 nC
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation2.2 W-2.2 W
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
PackagingReelReelReel
SeriesDMN3018-DMN3018
Transistor Type1 N-Channel-1 N-Channel
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Fall Time4.1 ns-4.1 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time4.4 ns-4.4 ns
Factory Pack Quantity200030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time20.1 ns-20.1 ns
Typical Turn On Delay Time4.3 ns-4.3 ns
Unit Weight0.002540 oz-0.002540 oz
Qualification-AEC-Q101-
Tradename--PowerDI
Fabricante Parte # Descripción RFQ
Diodes Incorporated
Diodes Incorporated
DMN3018SFG-7 MOSFET 30V N-Ch Enh Mode 25Vgss 1.0W 697pF
DMN3018SFGQ-13 MOSFET MOSFET BVDSS: 25V-30V
DMN3018SFG-13 MOSFET 30V N-Ch Enh Mode 25Vgss 1.0W 697pF
DMN3018SFGQ-7 MOSFET MOSFET BVDSS: 25V-30V
DMN3018SFG Nuevo y original
DMN3018SFG-7 Darlington Transistors MOSFET 30V N-Ch Enh Mode 25Vgss 1.0W 697pF
DMN3018SFG-13 Darlington Transistors MOSFET 30V N-Ch Enh Mode 25Vgss 1.0W 697pF
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