DMN3009S

DMN3009SK3-13 vs DMN3009SFGQ-7 vs DMN3009SFGQ-13

 
PartNumberDMN3009SK3-13DMN3009SFGQ-7DMN3009SFGQ-13
DescriptionMOSFET MOSFETBVDSS: 25V-30VMOSFET MOSFET BVDSS: 25V-30VMOSFET MOSFET BVDSS: 25V-30V
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
RoHSY--
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3PowerDI3333-8PowerDI3333-8
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V30 V30 V
Id Continuous Drain Current80 A45 A45 A
Rds On Drain Source Resistance5.5 mOhms5.5 mOhms5.5 mOhms
Vgs th Gate Source Threshold Voltage1 V1 V1 V
Vgs Gate Source Voltage20 V20 V20 V
Qg Gate Charge42 nC42 nC42 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation44 W2.1 W2.1 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelReel
Transistor Type1 N-Channel--
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Fall Time15 ns14.6 ns14.6 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time4.1 ns4.1 ns4.1 ns
Factory Pack Quantity250020003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time31 ns31 ns31 ns
Typical Turn On Delay Time3.9 ns3.9 ns3.9 ns
Unit Weight0.011640 oz0.002540 oz0.002540 oz
Qualification-AEC-Q101AEC-Q101
Fabricante Parte # Descripción RFQ
Diodes Incorporated
Diodes Incorporated
DMN3009SK3-13 MOSFET MOSFETBVDSS: 25V-30V
DMN3009SSS-13 MOSFET MOSFET BVDSS: 8V-24V
DMN3009SFGQ-7 MOSFET MOSFET BVDSS: 25V-30V
DMN3009SFGQ-13 MOSFET MOSFET BVDSS: 25V-30V
DMN3009SFG Nuevo y original
DMN3009SFG-13 30V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3009SFG-7 30V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3009SK3 Nuevo y original
DMN3009SK3-13 MOSFET N-CHANNEL 30V 80A TO252
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