PartNumber | DMN3009SK3-13 | DMN3009SFGQ-7 | DMN3009SFGQ-13 |
Description | MOSFET MOSFETBVDSS: 25V-30V | MOSFET MOSFET BVDSS: 25V-30V | MOSFET MOSFET BVDSS: 25V-30V |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | - | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | PowerDI3333-8 | PowerDI3333-8 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 30 V | 30 V | 30 V |
Id Continuous Drain Current | 80 A | 45 A | 45 A |
Rds On Drain Source Resistance | 5.5 mOhms | 5.5 mOhms | 5.5 mOhms |
Vgs th Gate Source Threshold Voltage | 1 V | 1 V | 1 V |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Qg Gate Charge | 42 nC | 42 nC | 42 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 44 W | 2.1 W | 2.1 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Reel | Reel | Reel |
Transistor Type | 1 N-Channel | - | - |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Fall Time | 15 ns | 14.6 ns | 14.6 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 4.1 ns | 4.1 ns | 4.1 ns |
Factory Pack Quantity | 2500 | 2000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 31 ns | 31 ns | 31 ns |
Typical Turn On Delay Time | 3.9 ns | 3.9 ns | 3.9 ns |
Unit Weight | 0.011640 oz | 0.002540 oz | 0.002540 oz |
Qualification | - | AEC-Q101 | AEC-Q101 |