PartNumber | DMN2065UWQ-7 | DMN2065UW-7 | DMN2065UW-7-F |
Description | MOSFET MOSFETBVDSS: 8V-24V | MOSFET MOSFET BVDSS: 8V-24V 8V-24V SOT323 T&R 3K | |
Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOT-323-3 | SOT-323-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 20 V | 20 V | - |
Id Continuous Drain Current | 2.8 A | 3.1 A | - |
Rds On Drain Source Resistance | 52 mOhms | 56 mOhms | - |
Vgs th Gate Source Threshold Voltage | 350 mV | 350 mV | - |
Vgs Gate Source Voltage | 12 V | 4.5 V | - |
Qg Gate Charge | 5.4 nC | 5.4 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 700 mW | 700 mW | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Qualification | AEC-Q101 | - | - |
Packaging | Reel | Reel | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | Diodes Incorporated | Diodes Incorporated | - |
Forward Transconductance Min | 7 S | - | - |
Fall Time | 7.2 ns | 7.2 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 9.7 ns | 9.7 ns | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 23.8 ns | 23.8 ns | - |
Typical Turn On Delay Time | 3.5 ns | 3.5 ns | - |
Unit Weight | 0.000952 oz | 0.000176 oz | - |
Series | - | DMN2065 | - |