DMM

DMMT5551S vs DMMT5551S-13-F vs DMMT5551-7-F

 
PartNumberDMMT5551SDMMT5551S-13-FDMMT5551-7-F
DescriptionTRANSISTOR, NPN MAT, 180V, 0.2A, SOT26, Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:160V, Power Dissipation Pd:300mW, DC Collector Current:200mA, DC Current Gain hFE:80hFE, No. oTRANS 2NPN 160V 0.2A SOT26
Manufacturer--Diodes Incorporated
Product Category--Transistors (BJT) - Arrays
Series--DMMT5551
Packaging--Digi-ReelR Alternate Packaging
Unit Weight--0.001058 oz
Mounting Style--SMD/SMT
Package Case--SOT-23-6
Mounting Type--Surface Mount
Supplier Device Package--SOT-26
Configuration--Dual
Power Max--300mW
Transistor Type--2 NPN (Dual) Matched Pair
Current Collector Ic Max--200mA
Voltage Collector Emitter Breakdown Max--160V
DC Current Gain hFE Min Ic Vce--80 @ 10mA, 5V
Vce Saturation Max Ib Ic--200mV @ 5mA, 50mA
Current Collector Cutoff Max--50nA (ICBO)
Frequency Transition--300MHz
Pd Power Dissipation--300 mW
Maximum Operating Temperature--+ 150 C
Minimum Operating Temperature--- 55 C
Collector Emitter Voltage VCEO Max--160 V
Transistor Polarity--NPN
Collector Emitter Saturation Voltage--200 mV
Collector Base Voltage VCBO--180 V
Emitter Base Voltage VEBO--6 V
Maximum DC Collector Current--200 mA
Gain Bandwidth Product fT--300 MHz
DC Collector Base Gain hfe Min--30 at 50 mA 5 V
  • Empezar con
  • DMM 125
Fabricante Parte # Descripción RFQ
Diodes Incorporated
Diodes Incorporated
DMMT5551S-7-F Bipolar Transistors - BJT NPN BIPOLAR
DMMT5551S TRANSISTOR, NPN MAT, 180V, 0.2A, SOT26, Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:160V, Power Dissipation Pd:300mW, DC Collector Current:200mA, DC Current Gain hFE:80hFE, No. o
DMMT5551S-13-F Nuevo y original
DMMT5551S7F Nuevo y original
DMMY Nuevo y original
DMMT5551S-7-F TRANS 2NPN 160V 0.2A SOT26
DMMT5551-7-F TRANS 2NPN 160V 0.2A SOT26
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