 | |  | |
| PartNumber | DMJ65H650SCTI | DMJ65H190SCTI | DMJ70H1D0SV3 |
| Description | MOSFET MOSFET BVDSS: 501V-650V | MOSFET MOSFET BVDSS: 501V~650V ITO-220AB TUBE 50PCS | MOSFET MOSFETBVDSS: 651V-800V |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | MOSFET |
| Package / Case | ITO-220AB-3 | ITO-220AB-3 | TO-251-3 |
| Packaging | Tube | Tube | - |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 50 | 50 | 75 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Technology | - | Si | Si |
| Mounting Style | - | Through Hole | Through Hole |
| RoHS | - | - | Y |
| Number of Channels | - | - | 1 Channel |
| Transistor Polarity | - | - | N-Channel |
| Vds Drain Source Breakdown Voltage | - | - | 700 V |
| Id Continuous Drain Current | - | - | 6 A |
| Rds On Drain Source Resistance | - | - | 900 mOhms |
| Vgs th Gate Source Threshold Voltage | - | - | 2 V |
| Vgs Gate Source Voltage | - | - | 30 V |
| Qg Gate Charge | - | - | 12.8 nC |
| Minimum Operating Temperature | - | - | - 55 C |
| Maximum Operating Temperature | - | - | + 150 C |
| Pd Power Dissipation | - | - | 104 W |
| Configuration | - | - | Single |
| Channel Mode | - | - | Enhancement |
| Transistor Type | - | - | 1 N-Channel |
| Fall Time | - | - | 3 ns |
| Rise Time | - | - | 14 ns |
| Typical Turn Off Delay Time | - | - | 23 ns |
| Typical Turn On Delay Time | - | - | 8 ns |
| Unit Weight | - | - | 0.011640 oz |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Diodes Incorporated |
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