 | | |
| PartNumber | DMG4N65CTI | DMG4N60SCT |
| Description | MOSFET N-CH MOSFET 650V 4A | MOSFET MOSFET BVDSS: 501V-650V |
| Manufacturer | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | - |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 650 V | - |
| Id Continuous Drain Current | 4 A | - |
| Rds On Drain Source Resistance | 2.1 Ohms | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - |
| Vgs Gate Source Voltage | 30 V | - |
| Qg Gate Charge | 13.5 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 8.35 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Packaging | Tube | Tube |
| Series | DMG4N65 | - |
| Transistor Type | 1 N-Channel | - |
| Brand | Diodes Incorporated | Diodes Incorporated |
| Fall Time | 16 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 13.8 ns | - |
| Factory Pack Quantity | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 40 ns | - |
| Typical Turn On Delay Time | 15.1 ns | - |
| Unit Weight | 0.081130 oz | 0.063493 oz |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMG4N65CTI | MOSFET N-CH MOSFET 650V 4A | |
| DMG4N60SCT | MOSFET MOSFET BVDSS: 501V-650V | ||
| DMG4N60SCT | MOSFET NCH 600V 4.5A TO220 | ||
| DMG4N65CTI | MOSFET N-CH MOSFET 650V 4A | ||
| DMG4N60SK3-13 | MOSFET BVDSS: 501V 650V TO252 T& | ||
| DMG4N65CT | MOSFET N-CH MOSFET 650V 4A |