 |  | | |
| PartNumber | DMG1016UDW-7 | DMG1016UDW-7-F | DMG1016UDW-7-CUT TAPE |
| Description | MOSFET 20V Vdss 6V VGSS Complementary Pair | ||
| Manufacturer | Diodes Incorporated | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-363-6 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel, P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 1.066 A, 845 mA | - | - |
| Rds On Drain Source Resistance | 450 mOhms, 750 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 500 mV | - | - |
| Vgs Gate Source Voltage | 4.5 V | - | - |
| Qg Gate Charge | 736.6 nC, 622.4 pC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 330 mW | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Product | MOSFET Small Signal | - | - |
| Series | DMG1016 | - | - |
| Transistor Type | 1 N-Channel, 1 P-Channel | - | - |
| Brand | Diodes Incorporated | - | - |
| Fall Time | 12.3 ns, 20.72 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 7.4 ns, 8.1 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 26.7 ns, 28.4 ns | - | - |
| Typical Turn On Delay Time | 5.1 ns, 5.1 ns | - | - |
| Unit Weight | 0.000212 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMG1016UDW-7 | MOSFET 20V Vdss 6V VGSS Complementary Pair | |
| DMG1016UDW-7 | MOSFET BVDSS: 8V 24V SOT363 T& | ||
| DMG1016UDW-7-F | Nuevo y original | ||
| DMG1016UDW-72014 | Nuevo y original | ||
| DMG1016UDW-7-CUT TAPE | Nuevo y original |