PartNumber | DMG1016UDW-7 | DMG1016UDW | DMG1016UDW-7-CUT TAPE |
Description | MOSFET 20V Vdss 6V VGSS Complementary Pair | ||
Manufacturer | Diodes Incorporated | DIODES | - |
Product Category | MOSFET | FETs - Arrays | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOT-363-6 | - | - |
Number of Channels | 2 Channel | 2 Channel | - |
Transistor Polarity | N-Channel, P-Channel | N-Channel P-Channel | - |
Vds Drain Source Breakdown Voltage | 20 V | - | - |
Id Continuous Drain Current | 1.066 A, 845 mA | - | - |
Rds On Drain Source Resistance | 450 mOhms, 750 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 500 mV | - | - |
Vgs Gate Source Voltage | 4.5 V | - | - |
Qg Gate Charge | 736.6 nC, 622.4 pC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 330 mW | - | - |
Configuration | Dual | N-Channel P-Channel | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Digi-ReelR Alternate Packaging | - |
Product | MOSFET Small Signal | - | - |
Series | DMG1016 | DMG1016 | - |
Transistor Type | 1 N-Channel, 1 P-Channel | 1 N-Channel 1 P-Channel | - |
Brand | Diodes Incorporated | - | - |
Fall Time | 12.3 ns, 20.72 ns | 12.3 ns | - |
Product Type | MOSFET | - | - |
Rise Time | 7.4 ns, 8.1 ns | 7.4 nS | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 26.7 ns, 28.4 ns | 26.7 ns | - |
Typical Turn On Delay Time | 5.1 ns, 5.1 ns | 5.1 ns | - |
Unit Weight | 0.000212 oz | 0.000212 oz | - |
Package Case | - | 6-TSSOP, SC-88, SOT-363 | - |
Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
Mounting Type | - | Surface Mount | - |
Supplier Device Package | - | SOT-363 | - |
FET Type | - | N and P-Channel | - |
Power Max | - | 330mW | - |
Drain to Source Voltage Vdss | - | 20V | - |
Input Capacitance Ciss Vds | - | 60.67pF @ 10V | - |
FET Feature | - | Logic Level Gate | - |
Current Continuous Drain Id 25°C | - | 1.07A, 845mA | - |
Rds On Max Id Vgs | - | 450 mOhm @ 600mA, 4.5V | - |
Vgs th Max Id | - | 1V @ 250μA | - |
Gate Charge Qg Vgs | - | 0.74nC @ 4.5V | - |
Pd Power Dissipation | - | 330 mW | - |
Vgs Gate Source Voltage | - | 6 V | - |
Id Continuous Drain Current | - | 1066 mA 845 mA | - |
Vds Drain Source Breakdown Voltage | - | 20 V 20 V | - |
Rds On Drain Source Resistance | - | 750 mOhms 1.05 Ohms | - |