CY7S1061GE3

CY7S1061GE30-10BVXIT vs CY7S1061GE30-10BVXI vs CY7S1061GE30-10BVM

 
PartNumberCY7S1061GE30-10BVXITCY7S1061GE30-10BVXICY7S1061GE30-10BVM
DescriptionSRAM Async SRAMSSRAM Async SRAMSSRAM 16Mb Powersnooze 3.3V ERR pinMil temp
ManufacturerCypress SemiconductorCypress SemiconductorIDT (Integrated Device Technology)
Product CategorySRAMSRAMSRAM
RoHSYYN
Memory Size16 Mbit16 Mbit9 Mbit
Organization1 M x 161 M x 16256 k x 36
Access Time10 ns10 ns10 ns
Maximum Clock Frequency---
Minimum Operating Temperature- 40 C- 40 C- 40 C
Maximum Operating Temperature+ 85 C+ 85 C+ 85 C
PackagingReelTrayTray
Memory TypeVolatileVolatileSDR
SeriesCY7S1061CY7S106170T651
TypeSynchronousSynchronousAsynchronous
BrandCypress SemiconductorCypress SemiconductorIDT
Moisture SensitiveYesYesYes
Product TypeSRAMSRAMSRAM
Factory Pack Quantity20004806
SubcategoryMemory & Data StorageMemory & Data StorageMemory & Data Storage
Interface Type--Parallel
Supply Voltage Max--2.6 V
Supply Voltage Min--2.4 V
Supply Current Max--445 mA
Mounting Style--SMD/SMT
Package / Case--CABGA-256
Height--1.4 mm
Length--17 mm
Width--17 mm
Part # Aliases--70T651 IDT70T651S10BCI
Fabricante Parte # Descripción RFQ
Cypress Semiconductor
Cypress Semiconductor
CY7S1061GE30-10BVXIT SRAM Async SRAMS
CY7S1061GE30-10ZXI SRAM 16Mb Fast SRAM With PowerSnooze
CY7S1061GE30-10BVXI SRAM Async SRAMS
CY7S1061GE30-10ZXIT SRAM Async SRAMS
CY7S1061GE30-10BVM SRAM 16Mb Powersnooze 3.3V ERR pinMil temp
CY7S1061GE30-10BVM 16MB POWERSNOOZE 3.3V ERR PIN MI
CY7S1061GE30-10BVXIT Nuevo y original
CY7S1061GE30-10BVXI Nuevo y original
CY7S1061GE30-10ZXIT Nuevo y original
CY7S1061GE30-10ZXI SRAM 16Mb Fast SRAM With PowerSnooze
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