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| PartNumber | CY7S1041G30-10VXI | CY7S1041G30-10BVXI | CY7S1041G30-10BVXIT |
| Description | SRAM ASYNC SRAMS | SRAM CMOS RAM W ECC 4-Mbit | SRAM Async SRAMS |
| Manufacturer | Cypress Semiconductor | Cypress Semiconductor | Cypress Semiconductor |
| Product Category | SRAM | SRAM | SRAM |
| RoHS | Y | Y | Y |
| Memory Size | 4 Mbit | 4 Mbit | 4 Mbit |
| Organization | 256 k x 16 | 256 k x 16 | 256 k x 16 |
| Access Time | 10 ns | 10 ns | 10 ns |
| Interface Type | Parallel | Parallel | Parallel |
| Supply Voltage Max | 3.6 V | 3.6 V | 3.6 V |
| Supply Voltage Min | 2.2 V | 2.2 V | 2.2 V |
| Supply Current Max | 45 mA | 45 mA | 45 mA |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 85 C | + 85 C | + 85 C |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOJ-44 | VFBGA-48 | VFBGA-48 |
| Packaging | Tube | Tray | Reel |
| Memory Type | SDR | Volatile | SDR |
| Brand | Cypress Semiconductor | Cypress Semiconductor | Cypress Semiconductor |
| Moisture Sensitive | Yes | Yes | Yes |
| Product Type | SRAM | SRAM | SRAM |
| Factory Pack Quantity | 85 | 480 | 2000 |
| Subcategory | Memory & Data Storage | Memory & Data Storage | Memory & Data Storage |
| Maximum Clock Frequency | - | - | - |
| Type | - | Asynchronous | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Cypress Semiconductor |
CY7S1041G30-10VXI | SRAM ASYNC SRAMS | |
| CY7S1041G30-10ZSXI | SRAM CMOS RAM W ECC 4-Mbit | ||
| CY7S1041G30-10BVXI | SRAM CMOS RAM W ECC 4-Mbit | ||
| CY7S1041G30-10VXIT | SRAM Async SRAMS | ||
| CY7S1041G30-10ZSXIT | SRAM Async SRAMS | ||
| CY7S1041G30-10BVXIT | SRAM Async SRAMS | ||
| CY7S1041G30-10BVXIT | IC SRAM 4M PARALLEL | ||
| CY7S1041G30-10VXIT | IC SRAM 4M PARALLEL | ||
| CY7S1041G30-10ZSXIT | IC SRAM 4M PARALLEL | ||
| CY7S1041G30-10ZSXI | Nuevo y original | ||
| CY7S1041G30-10VXI | Nuevo y original | ||
| CY7S1041G30-10BVXI | Nuevo y original | ||
| CY7S1041G30-10ZSXIES | Nuevo y original |