CY7C1313CV18-2

CY7C1313CV18-200BZXI vs CY7C1313CV18-250BZC vs CY7C1313CV18-200BZC

 
PartNumberCY7C1313CV18-200BZXICY7C1313CV18-250BZCCY7C1313CV18-200BZC
DescriptionSRAM 1Mx18 1.8V QDR-II SRAM (4-WORD BURST)SRAM 1Mx18 1.8V DDR II SRAMSRAM 1Mx18 1.8V DDR II SRAM
ManufacturerCypress SemiconductorCypress SemiconductorCypress Semiconductor
Product CategorySRAMSRAMSRAM
RoHSYNN
Memory Size18 Mbit18 Mbit18 Mbit
Access Time0.45 ns0.45 ns0.45 ns
Maximum Clock Frequency200 MHz250 MHz200 MHz
Supply Voltage Max1.9 V1.9 V1.9 V
Supply Voltage Min1.7 V1.7 V1.7 V
Supply Current Max590 mA705 mA590 mA
Minimum Operating Temperature- 40 C0 C0 C
Maximum Operating Temperature+ 85 C+ 70 C+ 70 C
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseFBGAFBGAFBGA
Data RateQDRQDRQDR
SeriesCY7C1313CV18CY7C1313CV18CY7C1313CV18
TypeSynchronousSynchronousSynchronous
BrandCypress SemiconductorCypress SemiconductorCypress Semiconductor
Number of Ports222
Moisture SensitiveYesYesYes
Product TypeSRAMSRAMSRAM
Factory Pack Quantity136136136
SubcategoryMemory & Data StorageMemory & Data StorageMemory & Data Storage
Unit Weight0.014110 oz0.014110 oz0.014110 oz
Fabricante Parte # Descripción RFQ
Cypress Semiconductor
Cypress Semiconductor
CY7C1313CV18-250BZI SRAM 1Mx18 1.8V QDR II (4-Word Burst)
CY7C1313CV18-200BZXI SRAM 1Mx18 1.8V QDR-II SRAM (4-WORD BURST)
CY7C1313CV18-250BZC SRAM 1Mx18 1.8V DDR II SRAM
CY7C1313CV18-200BZC SRAM 1Mx18 1.8V DDR II SRAM
CY7C1313CV18-200BZC IC SRAM 18M PARALLEL 165FBGA
CY7C1313CV18-200BZXI IC SRAM 18M PARALLEL 165FBGA
CY7C1313CV18-250BZC IC SRAM 18M PARALLEL 165FBGA
CY7C1313CV18-250BZI IC SRAM 18M PARALLEL 165FBGA
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