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| PartNumber | CY7C10612G30-10ZSXI | CY7C10612G30-10ZSXIT | CY7C10612GE30-10ZSXI |
| Description | SRAM Async SRAMS | SRAM Async SRAMS | SRAM Async SRAMS |
| Manufacturer | Cypress Semiconductor | Cypress Semiconductor | Cypress Semiconductor |
| Product Category | SRAM | SRAM | SRAM |
| RoHS | Y | Y | Y |
| Memory Size | 16 Mbit | 16 Mbit | 16 Mbit |
| Organization | 1 M x 16 | 1 M x 16 | 1 M x 16 |
| Access Time | 10 ns | 10 ns | 10 ns |
| Interface Type | Parallel | Parallel | - |
| Supply Voltage Max | 3.6 V | 3.6 V | - |
| Supply Voltage Min | 3 V | 3 V | - |
| Supply Current Max | 110 mA | 110 mA | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 85 C | + 85 C | + 85 C |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TSOP-54 | TSOP-54 | - |
| Packaging | Tray | Reel | Tray |
| Memory Type | SDR | Volatile | Volatile |
| Series | CY7C10612 | CY7C10612 | CY7C10612 |
| Brand | Cypress Semiconductor | Cypress Semiconductor | Cypress Semiconductor |
| Moisture Sensitive | Yes | Yes | Yes |
| Product Type | SRAM | SRAM | SRAM |
| Factory Pack Quantity | 108 | 1000 | 108 |
| Subcategory | Memory & Data Storage | Memory & Data Storage | Memory & Data Storage |
| Unit Weight | 0.021355 oz | - | - |
| Maximum Clock Frequency | - | - | - |
| Type | - | Asynchronous | Asynchronous |