CSD86330Q

CSD86330Q3D vs CSD86330Q3D/BKN vs CSD86330Q3DTI

 
PartNumberCSD86330Q3DCSD86330Q3D/BKNCSD86330Q3DTI
DescriptionMOSFET Sync Buck NexFET Pwr Block MOSFET
ManufacturerTexas Instruments--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseLSON-CLIP-8--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage25 V--
Id Continuous Drain Current4.5 A--
Vgs th Gate Source Threshold Voltage900 mV--
Vgs Gate Source Voltage5 V--
Qg Gate Charge4.8 nC, 9.2 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation6 W--
ConfigurationDual--
Channel ModeEnhancement--
TradenameNexFET--
PackagingReel--
Height1.5 mm--
Length3.3 mm--
SeriesCSD86330Q3D--
Transistor Type2 N-Channel--
Width3.3 mm--
BrandTexas Instruments--
Forward Transconductance Min52 S, 82 S--
Development KitCSD86330EVM-717, TPS40322EVM-679--
Fall Time1.9 ns, 4.2 ns--
Product TypeMOSFET--
Rise Time7.5 ns, 6.3 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time8.5 ns, 15.8 ns--
Typical Turn On Delay Time4.9 ns, 5.3 ns--
Unit Weight0.002254 oz--
Fabricante Parte # Descripción RFQ
Texas Instruments
Texas Instruments
CSD86330Q3D MOSFET Sync Buck NexFET Pwr Block MOSFET
CSD86330Q3D/BKN Nuevo y original
CSD86330Q3DTI Nuevo y original
CSD86330Q3D Synchronous Buck Power Block 8-Pin SON EP T/R
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