PartNumber | CSD86330Q3D | CSD86330Q3D/BKN | CSD86330Q3DTI |
Description | MOSFET Sync Buck NexFET Pwr Block MOSFET | ||
Manufacturer | Texas Instruments | - | - |
Product Category | MOSFET | - | - |
RoHS | E | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | LSON-CLIP-8 | - | - |
Number of Channels | 2 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 25 V | - | - |
Id Continuous Drain Current | 4.5 A | - | - |
Vgs th Gate Source Threshold Voltage | 900 mV | - | - |
Vgs Gate Source Voltage | 5 V | - | - |
Qg Gate Charge | 4.8 nC, 9.2 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 6 W | - | - |
Configuration | Dual | - | - |
Channel Mode | Enhancement | - | - |
Tradename | NexFET | - | - |
Packaging | Reel | - | - |
Height | 1.5 mm | - | - |
Length | 3.3 mm | - | - |
Series | CSD86330Q3D | - | - |
Transistor Type | 2 N-Channel | - | - |
Width | 3.3 mm | - | - |
Brand | Texas Instruments | - | - |
Forward Transconductance Min | 52 S, 82 S | - | - |
Development Kit | CSD86330EVM-717, TPS40322EVM-679 | - | - |
Fall Time | 1.9 ns, 4.2 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 7.5 ns, 6.3 ns | - | - |
Factory Pack Quantity | 2500 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 8.5 ns, 15.8 ns | - | - |
Typical Turn On Delay Time | 4.9 ns, 5.3 ns | - | - |
Unit Weight | 0.002254 oz | - | - |