PartNumber | CSD18542KTT | CSD18542KTTT | CSD18542KCS |
Description | MOSFET 60V, N ch NexFET MOSFETG , single D2PAK, 4mOhm 3-DDPAK/TO-263 -55 to 175 | MOSFET 60V N-Channel NexFET Pwr MOSFET | MOSFET 60V N-channel NexFET Power MOSFET |
Manufacturer | Texas Instruments | Texas Instruments | Texas Instruments |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | E | E |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | Through Hole |
Package / Case | TO-263-3 | TO-263-3 | TO-220-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 60 V | 60 V | 60 V |
Id Continuous Drain Current | 200 A | 200 A | 170 A |
Rds On Drain Source Resistance | 4 mOhms | 4 mOhms | 4 mOhms |
Vgs th Gate Source Threshold Voltage | 1.5 V | 1.8 V | 1.5 V |
Vgs Gate Source Voltage | 20 V | 20 V | 10 V |
Qg Gate Charge | 44 nC | 44 nC | 44 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Pd Power Dissipation | 250 W | 250 W | 200 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | NexFET | NexFET | NexFET |
Packaging | Reel | Reel | Tube |
Height | 19.7 mm | 19.7 mm | 16.51 mm |
Length | 9.25 mm | 9.25 mm | 10.67 mm |
Series | CSD18542KTT | CSD18542KTT | CSD18542KCS |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 10.26 mm | 10.26 mm | 4.7 mm |
Brand | Texas Instruments | Texas Instruments | Texas Instruments |
Forward Transconductance Min | 198 S | 198 S | 198 S |
Fall Time | 2 ns | 2 ns | 21 ns |
Moisture Sensitive | Yes | Yes | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 4 ns | 4 ns | 5 ns |
Factory Pack Quantity | 500 | 50 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 16 ns | 2 ns | 18 ns |
Typical Turn On Delay Time | 6 ns | 6 ns | 6 ns |
Development Kit | - | - | - |
Unit Weight | - | - | 0.211644 oz |