CMPT5086

CMPT5086 TR vs CMPT5086 TR TIN/LEAD vs CMPT5086

 
PartNumberCMPT5086 TRCMPT5086 TR TIN/LEADCMPT5086
DescriptionBipolar Transistors - BJT PNP Gen PurposeBipolar Transistors - BJT PNP 50Vcbo 50Vceo 3.0Vebo 50mA 350mW
ManufacturerCentral SemiconductorCentral SemiconductorCENTRAL
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTTransistors (BJT) - Single
RoHSYN-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23SOT-23-3-
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max50 V50 V-
Collector Base Voltage VCBO50 V50 V-
Emitter Base Voltage VEBO3 V3 V-
Collector Emitter Saturation Voltage0.3 V0.3 V-
Maximum DC Collector Current0.05 A--
Gain Bandwidth Product fT40 MHz40 MHz-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesCMPT5086CMPT5-
Height0.96 (Max) mm--
Length3.05 (Max) mm--
PackagingReelReel-
Width1.4 (Max) mm--
BrandCentral SemiconductorCentral Semiconductor-
DC Collector/Base Gain hfe Min150150 at 100 uA, 5 V-
Pd Power Dissipation350 mW350 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity30003000-
SubcategoryTransistorsTransistors-
Part # AliasesCMPT5086 PBFREE TR--
Unit Weight0.000282 oz--
Technology-Si-
DC Current Gain hFE Max-500 at 100 uA, 5 V-
Continuous Collector Current-50 A-
Fabricante Parte # Descripción RFQ
Central Semiconductor
Central Semiconductor
CMPT5086 TR Bipolar Transistors - BJT PNP Gen Purpose
CMPT5086 TR TIN/LEAD Bipolar Transistors - BJT PNP 50Vcbo 50Vceo 3.0Vebo 50mA 350mW
CMPT5086 Nuevo y original
CMPT5086-C2P Nuevo y original
Central Semiconductor
Central Semiconductor
CMPT5086 TR Bipolar Transistors - BJT PNP Gen Purpose
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