 |  | | |
| PartNumber | CMF10120 | CMF10120D | CMF10120D,CMF10120 |
| Description | MOSFET N-CH 1200V 24A TO247 | ||
| Manufacturer | - | Cree Inc. | - |
| Product Category | - | FETs - Single | - |
| Series | - | Z-FET | - |
| Packaging | - | Tube | - |
| Unit Weight | - | 1.340411 oz | - |
| Mounting Style | - | Through Hole | - |
| Package Case | - | TO-247-3 | - |
| Technology | - | SiC | - |
| Operating Temperature | - | -55°C ~ 135°C (TJ) | - |
| Mounting Type | - | Through Hole | - |
| Number of Channels | - | 1 Channel | - |
| Supplier Device Package | - | TO-247 | - |
| Configuration | - | Single | - |
| FET Type | - | MOSFET N-Channel, Metal Oxide | - |
| Power Max | - | 134W | - |
| Transistor Type | - | 1 N-Channel | - |
| Drain to Source Voltage Vdss | - | 1200V (1.2kV) | - |
| Input Capacitance Ciss Vds | - | 928pF @ 800V | - |
| FET Feature | - | Silicon Carbide (SiC) | - |
| Current Continuous Drain Id 25°C | - | 24A (Tc) | - |
| Rds On Max Id Vgs | - | 220 mOhm @ 10A, 20V | - |
| Vgs th Max Id | - | 4V @ 500μA | - |
| Gate Charge Qg Vgs | - | 47.1nC @ 20V | - |
| Pd Power Dissipation | - | 152 W | - |
| Maximum Operating Temperature | - | + 135 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 21 ns | - |
| Rise Time | - | 34 ns | - |
| Vgs Gate Source Voltage | - | 25 V | - |
| Id Continuous Drain Current | - | 24 A | - |
| Vds Drain Source Breakdown Voltage | - | 1200 V | - |
| Vgs th Gate Source Threshold Voltage | - | 2.5 V | - |
| Rds On Drain Source Resistance | - | 160 mOhms | - |
| Transistor Polarity | - | N-Channel | - |
| Typical Turn Off Delay Time | - | 38 ns | - |
| Typical Turn On Delay Time | - | 8.8 ns | - |
| Qg Gate Charge | - | 47.1 nC | - |
| Forward Transconductance Min | - | 3.7 S 3.4 S | - |
| Channel Mode | - | Enhancement | - |
