BVSS1

BVSS123LT1G vs BVSS123L vs BVSS130LT1G

 
PartNumberBVSS123LT1GBVSS123LBVSS130LT1G
DescriptionMOSFET NFET 100V 170MA 6OH
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current170 mA--
Rds On Drain Source Resistance6 Ohms--
Vgs th Gate Source Threshold Voltage1.6 V--
Vgs Gate Source Voltage10 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation225 mW--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
PackagingReelReel-
SeriesBSS123LBSS123L-
Transistor Type1 N-Channel1 N-Channel-
BrandON Semiconductor--
Forward Transconductance Min80 S--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time40 ns--
Typical Turn On Delay Time20 ns--
Unit Weight0.000282 oz0.050717 oz-
Package Case-SOT-23-3-
Id Continuous Drain Current-170 mA-
Vds Drain Source Breakdown Voltage-100 V-
Rds On Drain Source Resistance-6 Ohms-
Fabricante Parte # Descripción RFQ
BVSS138LT1G MOSFET NFET 50V 200MA 3.5O
BVSS123LT1G MOSFET NFET 100V 170MA 6OH
BVSS123L Nuevo y original
BVSS130LT1G Nuevo y original
BVSS138L Nuevo y original
BVSS138LT1G-CUT TAPE Nuevo y original
ON Semiconductor
ON Semiconductor
BVSS123LT1G MOSFET N-CH 100V 170MA SOT-23-3
BVSS138LT1G MOSFET N-CH 50V 200MA SOT-23-3
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